HFA08TB120
®
20
350
300
V
R
=600V
T
J
=125°C
16
T
J
=125°C
250
t
rr
(ns)
200
150
I
F
=10A
I
F
=20A
I
F
(A)
12
8
100
I
F
=5A
4
T
J
=25°C
50
1.5 2.0 2.5 3.0 3.5
V
F
（V）
Fig1. Forward Voltage Drop vs Forward Current
0.5
1.0
0
0
0
0
400
600
800
1000
di
F
/dt（A/μs）
Fig2. Reverse Recovery Time vs di
F
/dt
200
25
V
R
=600V
T
J
=125°C
1500
V
R
=600V
T
J
=125°C
I
F
=20A
20
1200
I
F
=20A
I
RRM
(A)
I
F
=10A
10
I
F
=5A
Q
rr
(nc)
15
900
600
I
F
=10A
I
F
=5A
5
300
0
0
400
600
1000
800
di
F
/dt（A/μs）
Fig3. Reverse Recovery Current vs di
F
/dt
200
0
0
400
600
800
1000
di
F
/dt（A/μs）
Fig4. Reverse Recovery Charge vs di
F
/dt
200
1.4
1.2
1.0
0.8
K
f
0.6
I
RRM
10
1
Z
thJC
(K/W)
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
-1
0.4
0.2
0
t
rr
Q
rr
10
-2
100 125 150
75
T
J
(°C)
Fig5. Dynamic Parameters vs Junction Temperature
0
25
50
10
-3
10
-4
10
10
10
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
-3
-2
-1
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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