tm
TE
CH
T15V256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 4.6
-0.5 to Vcc +0.5
0.7
-60 to +150
UNIT
V
V
W
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
Vcc
MIN
2.7
-0.3
2.4
0/-40
TYP
-
-
-
-
MAX
3.6
0.6
Vcc+0.3
+75/+85
UNIT
V
V
V
°C
V
IL
V
IH
T
A
TRUTH TABLE
CS
H
L
L
L
OE
X
H
L
X
WE
X
H
H
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Power
Standby
Active
Active
Active
OPERATING CHARACTERISTICS
(Vcc = 2.7V to 3.6V, Vss = 0V, Ta =
0 ~ +70
°C
/-40 to 85°C)
PARAMETER
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
TEST CONDITIONS
Vin=Vss to Vcc
V
I/O
=Vss to Vcc ,
OE
=
I
LI
I
LO
V
OL
V
OH
Icc
MIN. TYP. MAX. UNIT
-
-
1
µA
-
-
2.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
0.4
-
35
30
25
20
0.3
5
µA
V
V
mA
mA
mA
mA
mA
uA
V
IH
CS
=
V
IH
or
or
WE
=
V
IL
I
OL
= + 2.1mA
I
OH
= - 1.0mA
CS
=
V
IL
, I/O=0mA
Cycle = MIN.
Duty = 100%
-50
-70
-85
-100
I
SB
I
SB1
CS
=
V
IH
, Cycle=min, Duty=100%
CS
≥
Vcc
-0.2V
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
P. 3
Publication Date: SEP. 2001
Revision:A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
