tm
V
RAS V IH
IL
TE
CH
T2316405A
Preliminary T2316407A
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE
(Pseudo READ-MODIFY-WRITE)
tR A S C
tRP
tC S H
t PC
tCRP
tR C D
tCAS
tCP
tC A S
t PC
tC P
tR S H
tC A S
tCP
V
CA S V IH
IL
tR A D
tA R
tA S R t R A H
t AS C
tC A H
tA S C
tC A H
t AS C
tR A L
tC A H
ROW
ADDR
V IH
V IL
ROW
C O L U M N (A)
tR C S
C OLU M N(B )
tR C H
C O L U M N (N )
tW C S
t WC H
WE
V IH
V IL
t R AC
tA A
tCAC
tA C P
tA A
tC A C
tC O H
t WH Z
tD S
tD H
V IO H
I/O V
IOL
O PE N
t OA C
V A L ID D A T A ( A )
V A L ID
DA T A (B )
VALID DATA
IN
V
OE V IH
IL
RAS ONLY REFRESH CYCLE
(ADDR=A0-A10;
O E
,
W E
=DON‘T CARE)
t RC
tR A S
RAS V IH
V IL
tR P
tCRP
tR P C
V
CA S V IH
IL
tASR
ROW
tR A H
RO W
V
ADDR V IH
IL
V OH
V OL
I/O
OP EN
DON'T CARE
UNDEFINED
2
Taiwan Memory Technology, Inc. reserves the right
P. 11
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
