tm
RAS
TE
CH
T2316405A
Preliminary T2316407A
CBR REFRESH CYCLE
(A0-A10; OE =DON‘T CARE )
tRP
tR A S
tR P
tR A S
VI H
V IL
tRP C
tC P N
tC S R
t CH R
tRP C
tC S R
t CH R
CAS
VI H
V IL
O PEN
I/O
VI H
V IL
tW RP
tW R H
tW RP
tW R H
WE
HIDDEN REFRESH CYCLE
(
WE =HIGH;OE =LOW)
(R E A D )
tRA S
tR P
(R E F R E S H )
tRA S
RAS
V IH
V IL
V IH
V IL
tC RP
tR C D
t RS H
tC H R
CAS
tA R
t RAD
tA S R
tR A H
tA S C
tR A L
tC A H
A D D R V IH
V IL
ROW
C OL U MN
tA A
tR A C
tC A C
tC L Z
N OTE1
tO FF 1
I /O
V OH
V OL
OPEN
t OAC
V A L ID D A T A
tO F F 2
OPEN
OE
V IH
V IL
tO RD
Note:
1. t
OFF1
is referenced from the rising edge of
RAS
or
CAS
, whichever occurs last.
Taiwan Memory Technology, Inc. reserves the right
P. 12
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
