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tmCH
Preliminary T4312816A
*note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA0 – BA1.
BA0
BA1
Active & Read/Write
Bank A
0
1
0
1
0
0
1
1
Bnak B
Bank C
Bnak D
3. Enable and disable auto precharge function are controlled by A10/AP in read/wirte command.
A10
0
Auto-Precharge
Disable (End of burst)
Enable (End of burst)
1
BA0 BA1
Operation
0
1
0
1
0
0
1
1
Enable read/write command for bank A .
Enable read/write command for bank B .
Enable read/write command for bank C .
Enable read/write command for bank D .
4. A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP BA0 BA1
precharge
Bank A
0
0
0
0
1
0
1
0
0
Bank B
0
1
Bank C
1
1
Bank D
X
X
All Bamks
TMemory Technology Inc. reserves the right
to change products or specifications without notice.
P.14
Publication Date: APR. 2003
Revision: 0.B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
