tm
Parameter
TE
CH
Preliminary T4312816A
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
Iout
P
D
TOPR
Tstg
Value
-1.0 to 4.6
-1.0 to 4.6
50
1
0 to +70
-55 to +150
Unit
V
V
mA
W
°C
°C
Voltage on Any Pin Relative To Vss
Supply Voltage Relative To Vss
Short circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°
C
, Voltage referenced to V
SS
=0V)
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Symbol
V
DD
,V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
Min.
3.0
2.0
-0.3
2.4
-
-1
-1.5
Typ
3.3
3.0
0
-
-
-
-
Max.
3.6
V
DD
+0.3V
0.8
-
0.4
1
1.5
Unit
V
V
V
V
V
uA
uA
I
OH
=-4mA
I
OL
=4mA
1
2
Notes
Note :
1. Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V , all other pin are not under test = 0V.
2. Dout = disable, 0V
≤
V
OUT
≤
V
DD .
CAPACITANCE
(T
A
=25
°C
,V
DD
=3.3V, f = 1MHz)
Pin
CLOCK
ADDRESS
DQ0 ~ DQ15
RAS,CAS,WE,CS,CKE,LDQM,
UDQM
Symbol
C
CLK
C
ADD
C
OUT
C
IN
Min
2.5
2.5
4.0
2.5
Max
4.0
5.0
6.5
5.0
Unit
pF
pF
pF
pF
TM Technology Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: APR. 2003
Revision: 0.B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
