欢迎访问ic37.com |
会员登录 免费注册
发布采购

T4312816B-6S 参数 Datasheet PDF下载

T4312816B-6S图片预览
型号: T4312816B-6S
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16 SDRAM 2M X 16位X 4Banks同步DRAM [8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 70 页 / 665 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
 浏览型号T4312816B-6S的Datasheet PDF文件第6页浏览型号T4312816B-6S的Datasheet PDF文件第7页浏览型号T4312816B-6S的Datasheet PDF文件第8页浏览型号T4312816B-6S的Datasheet PDF文件第9页浏览型号T4312816B-6S的Datasheet PDF文件第11页浏览型号T4312816B-6S的Datasheet PDF文件第12页浏览型号T4312816B-6S的Datasheet PDF文件第13页浏览型号T4312816B-6S的Datasheet PDF文件第14页  
tm
CLK
CKE
TE
CH
T4312816B
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
tCK2
Clock min.
CS#
RAS#
CAS#
WE#
A11
A10
Address Key
A0-A9
DQM
t
RP
DQ
Hi-Z
PrechargeAll
Mode Register
Set Command
Any
Command
Mode Register Set Cycle
(CAS# Latency = 2, 3)
The mode register is divided into various fields depending on functionality.
Address
BS0,1
A11,10
RFU*
A9
WBL
A8
A7
A6
A5
A4
A3
BT
A2
A1
Burst Length
A0
Function RFU*
Test Mode
CAS Latency
*Note: RFU (Reserved for future use) should stay “0” during MRS cycle.
TM Technology Inc. reserves the right
P. 10
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A