tm
CLK
DQM
COMMAND
TE
CH
T0
T1
T2
T3
T4
T5
T6
T4312816B
T7
T8
1 Clk Interval
NOP
NOP
BANKA
ACTIVATE
NOP
READ A
WRITE A
NOP
NOP
NOP
CAS# latency=2
tCK2, DQ's
DIN A0
DIN A1
DIN A2
DIN A3
: "H" or "L"
Read to Write Interval
(Burst Length
≥
4, CAS# Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND
CAS# latency=2
tCK2, DQ's
NOP
NOP
READ A
NOP
NOP
WRITE B
NOP
NOP
NOP
DIN B0
DIN B1
DIN B2
DIN B3
: "H" or "L"
Read to Write Interval
(Burst Length
≥
4, CAS# Latency = 2)
A read burst without the auto precharge function may be interrupted by a BankPrecharge/ PrechargeAll
command to the same bank. The following figure shows the optimum time that BankPrecharge/ PrechargeAll
command is issued in different CAS# latency.
T0
CLK
Bank,
Col A
Bank,
Row
T1
T2
T3
T4
T5
T6
T7
T8
ADDRESS
Bank(s)
t
RP
COMMAND
READ A
NOP
NOP
NOP
Precharge
NOP
NOP
Activate
NOP
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Read to Precharge
(CAS# Latency = 2, 3)
5
Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A8 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after the read
operation. Once this command is given, any subsequent command cannot occur within a time delay of
{t
RP
(min.)
+ burst length}. At full-page burst, only the read operation is performed in this command and the auto precharge
function is ignored.
TM Technology Inc. reserves the right
P. 7
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
