tm
4
5
TE
CH
T431616D/E
Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", A11 = “V”, A10 = "H", A0-A7 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after the read
operation. Once this command is given, any subsequent command cannot occur within a time delay of
{
t
RP
(min.)
+ burst length
}
. At full-page burst, only the read operation is performed in this command and the auto precharge
function is ignored.
Write command
(RAS# = "H", CAS# = "L", WE# = "L", A11 = “V”, A10 = "L", A0-A7 = Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active row in an
active bank. The bank must be active for at least t
RCD
(min.) before the Write command is issued. During write
bursts, the first valid data-in element will be registered coincident with the Write command. Subsequent data
elements will be registered on each successive positive clock edge (refer to the following figure). The DQs
remain with high-impedance at the end of the burst unless another command is initiated. The burst length and
burst sequence are determined by the mode register, which is already programmed. A full-page burst will
continue until terminated (at the end of the page it will wrap to column 0 and continue).
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
COM MAND
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQ0 - DQ3
DIN A0
DIN A1
DIN A2
DIN A3
don't care
The first data element and the write
are registered on the same clock edge.
Extra data is masked.
Burst Write Operation
(Burst Length = 4, CAS# Latency = 1, 2, 3)
A write burst without the auto precharge function may be interrupted by a subsequent Write,
BankPrecharge/PrechargeAll, or Read command before the end of the burst length. An interrupt coming from
Write command can occur on any clock cycle following the previous Write command (refer to the following
figure).
T0
CLK
T1
T2
T3
T4
T5
T6
T7
T8
COM MAND
NOP
WRITE A
WRITE B
NOP
NOP
NOP
NOP
NOP
NOP
1 Clk Interval
DQ's
DIN A0
DIN B0
DIN B 1
DIN B2
DIN B3
Write Interrupted by a Write
(Burst Length = 4, CAS# Latency = 1, 2, 3)
TM Technology Inc. reserves the right
P. 9
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
TMT [ TAIWAN MEMORY TECHNOLOGY ]
