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T436416A-6S 参数 Datasheet PDF下载

T436416A-6S图片预览
型号: T436416A-6S
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16 SDRAM [4M X 16 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 710 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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TE  
tmCH  
T436416A  
Burst Length and Sequence  
(Burst of Two)  
Starting Address  
(column address A0 binary)  
0
Sequential Addressing  
Sequence (decimal)  
0,1  
Interleave Addressing  
Sequence (Decimal)  
0,1  
1,0  
1
1,0  
(Burst of Four)  
Starting Address  
(column address A1-A0 binary)  
00  
Sequential Addressing  
Sequence (decimal)  
0,1,2,3  
Interleave Addressing  
Sequence (Decimal)  
0,1,2,3  
01  
10  
11  
1,2,3,0  
2,3,0,1  
3,0,1,2  
1,0,3,2  
2,3,0,1  
3,2,1,0  
(Burst of Eight)  
Starting Address  
(column address A2-A0 binary)  
000  
Sequential Addressing  
Sequence (decimal)  
0,1,2,3,4,5,6,7  
Interleave Addressing  
Sequence (Decimal)  
0,1,2,3,4,5,6,7  
001  
010  
011  
1,2,3,4,5,6,7,0  
2,3,4,5,6,7,0,1  
3,4,5,6,7,0,1,2  
1,0,3,2,5,4,7,6  
2,3,0,1,6,7,4,5  
3,2,1,0,7,6,5,4  
100  
101  
4,5,6,7,0,1,2,3  
5,6,7,0,1,2,3,4  
4,5,6,7,0,1,2,3  
5,4,7,6,1,0,3,2  
110  
111  
6,7,0,1,2,3,4,5  
7,0,1,2,3,4,5,6  
6,7,4,5,2,3,0,1  
7,6,5,4,3,2,1,0  
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for  
1Mx16 divice.  
POWER UP SEQUENCE  
1. Apply power and start clock, attempt to maintain CKE = ‘H’ , L(U)DQM = ‘H’ and the other pin are NOP  
condition at the inputs.  
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.  
3. Issue precharge commands for all banks of the devices.  
4. Issue 2 or more auto-refresh commands.  
5. Issue mode register set command to initalize the mode register.  
Cf.) Sequence of 4 & 5 is regardless of the order.  
TM Technology Inc. reserves the right  
to change products or specifications without notice.  
P.11  
Publication Date:MAY. 2003  
Revision: B