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T436416A-8S 参数 Datasheet PDF下载

T436416A-8S图片预览
型号: T436416A-8S
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16 SDRAM [4M X 16 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 710 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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TE  
tmCH  
T436416A  
AC CHARACTERISTICS  
(AC opterating conditions unless otherwise noted)  
-6  
-7  
-7.5  
-8  
-10  
Symbol  
Parameter  
CAS Latency = 3  
Unit Note  
Min Max Min Max Min Max Min Max Min Max  
6
8
1K  
7
9
1K 7.5 1K  
9
8
1K 10 1K  
10  
CLK cycle time  
ns  
1
1
tCC  
CAS Latency = 2  
10  
CAS Latency = 3  
CAS Latency = 2  
-
-
5.5  
6
-
-
6
6
6
6
-
-
6
7
-
-
7
9
ns  
ns  
CLK to valid  
Output delay  
tSAC  
Output data hold time  
CLK high pulse width  
CLK low pulse width  
Input setup time  
2
2
2.5  
2.5  
2.5  
1.75  
1
2.5  
2.5  
2.5  
3
2.5  
3
ns  
ns  
ns  
ns  
ns  
ns  
2
3
3
3
3
2
tOH  
tCH  
tCL  
tSS  
tSH  
tSLZ  
2
2.5  
3
3
1.5  
1
1.75  
2
2.5  
1
Input hold time  
1
1
1
CLK to output in Low-Z  
1
1
1
1
CAS Latency = 3  
-
-
5.5  
6
-
-
6
6
6
6
-
-
6
7
-
-
7
9
ns  
ns  
CLK to output in  
Hi-Z  
tSHZ  
CAS Latency = 2  
Note: 1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.  
3. Assumed input rise and fall time (tr & tf)=1ns.  
If tr & tf is longer than 1ns,transient time compensation should be considered,  
i.e.,[(tr+tf)/2-1]ns should be added to the parameter.  
TM Technology Inc. reserves the right  
to change products or specifications without notice.  
P.8  
Publication Date: MAY. 2003  
Revision: B