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T436416A-8S 参数 Datasheet PDF下载

T436416A-8S图片预览
型号: T436416A-8S
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16 SDRAM [4M X 16 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 710 K
品牌: TMT [ TAIWAN MEMORY TECHNOLOGY ]
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TE  
tmCH  
T436416A  
OPERATING AC PARAMETER  
(AC opterating conditions unless otherwise noted)  
Speed Version  
-7 -7.5 -8 -10  
Parameter  
Symbol  
Unit Note  
-6  
Row active to row active delay  
RAS to CAS delay  
12  
14  
18  
20  
42  
15  
18  
20  
16  
20  
20  
48  
20  
20  
20  
50  
ns  
ns  
ns  
1
1
1
1
tRRD  
(min)  
(min)  
16  
18  
42  
tRCD  
tRP  
Row precharge time  
(min)  
45  
100K  
65  
1
2
1
1
1
1
ns  
ns  
ns  
CLK  
CLK  
CLK  
CLK  
tRAS  
(min)  
(max)  
(min)  
Row active time  
tRAS  
Row cycle time  
60  
63  
68  
70  
1
2
2
2
3
tRC  
Last data in to new col. Address delay  
Last data in to row precharge  
Last data in to burst stop  
tCDL  
tRDL  
tBDL  
tCCD  
(min)  
(min)  
(min)  
(min)  
Col. Address to col. Address delay  
CAS latency=3  
CAS latency=2  
Number of valid output data  
ea  
4
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required  
with clock cycle time and then rounding off to the next higher integer.  
2. Minimum delay is required to complete write.  
3. All parts allow every cycle column address change.  
4. In case of row precharge interrupt, auto precharge and read burst stop.  
The earliest a precharge command can be issued after a Read command without the loss of data is  
CL + BL-2 clocks.  
TM Technology Inc. reserves the right  
to change products or specifications without notice.  
P. 7  
Publication Date: MAY. 2003  
Revision: B