XP131A0616SR
■
Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
Power MOSFET
Ta=25:
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
CONDITIONS
Vds=20V, Vgs=0V
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
Id=5A, Vgs=4.5V
Id=5A, Vgs=2.5V
Id=1.5A, Vgs=1.5V
Id=5A, Vds=10V
If=10A, Vgs=0V
MIN
TYP
MAX
10
±1
0.5
0.012
0.016
0.028
28
0.85
1.1
1.2
0.016
0.022
0.045
UNITS
µA
µA
V
Ω
Ω
Ω
S
V
Yfs
Vf
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
MIN
TYP
2100
1000
400
MAX
Ta=25:
UNITS
pF
pF
pF
u
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs=5V, Id=5A
Vdd=10V
CONDITIONS
MIN
TYP
15
100
100
20
MAX
Ta=25:
UNITS
ns
ns
ns
ns
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP
50
MAX
UNITS
˚C/W
346
TOREX [ TOREX SEMICONDUCTOR ]
