XP162A12A6PR
■
Electrical Characteristics
Drain Current vs. Drain/Source Voltage
-10
-4.5V
Ta=25℃, Pulse Test
Power MOS FET
Drain Current vs. Gate/Source Voltage
-10
25℃
Vds=-10V, Pulse Test
-5V
-3.5V
-8
-8
Drain Current:Id (A)
-6
-2.5V
Drain Current:Id (A)
-4V
-3V
Ta=-55℃
125℃
-6
-4
-2V
-4
-2
Vgs=-1.5V
-2
0
0
-0.5
-1
-1.5
-2
-2.5
-3
0
0
-1
-2
-3
-4
-5
Drain/Source Voltage:Vds (V)
Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Gate/Source Voltage
0.5
Ta=25℃, Pulse Test
Drain/Source On-State Resistance vs. Drain Current
1
Ta=25℃, Pulse Test
Drain/Source On-State Resistance
:Rds(on) (Ω)
0.4
Drain/Source On-State Resistance
:Rds(on) (Ω)
u
Vgs=-2.5V
-4.5V
0.3
Id=-2.5A
-1.5A
0.1
0.2
0.1
0
0
-2
-4
-6
-8
-10
0.01
0
-2
-4
-6
-8
-10
Gate/Source Voltage:Vgs (V)
Drain Current:Id (A)
Drain/Source On-State Resistance vs. Ambient Temp.
0.5
Pulse Test
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
0.6
Vds=-10V, Id=-1mA
Gate/Source Cut Off Voltage Variance
:Vgs(off) Variance (V)
150
Drain/SourceOn-State Resistance
:Rds(on) (Ω)
0.4
Id =-2.5A
0.4
0.2
0
-0.2
-0.4
-0.6
-50
0
50
100
150
0.3
Vgs =-2.5V
-1.5A
0.2
-2.5A
-1.5A
0.1
-4.5V
0
-50
0
50
100
Ambient Temperature:Topr (℃)
Ambient Temperature:Topr (℃)
516
TOREX [ TOREX SEMICONDUCTOR ]
