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Electrical Characteristics
Capacitance vs. Drain/Source Voltage
1000
Vgs=0V, f=1MHz, Ta=25℃
Switching Time vs. Drain Current
1000
Vgs=-5V, Vdd≒-10V, PW=10μs, duty≦1%, Ta=25℃
Capacitance:C (pF)
Ciss
Coss
Switching Time:t (ns)
tf
100
100
Crss
td(off)
tr
10
td(on)
10
0
-5
-10
-15
-20
1
0
-1
-2
-3
-4
-5
Drain/Source Voltage:Vds (V)
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
-10
Vds=-10V, Id=-2.5A, Ta=25℃
Reverse Drain Current vs. Source/Drain Voltage
-10
Ta=25℃, Pulse Test
Gate/Source Voltage:Vgs (V)
-8
Reverse Drain Current:Idr (A)
-8
-4.5V
-6
-6
-2.5V
u
-4
-4
Vgs=0V, 4.5V
-2
-2
0
0
3
6
9
12
15
0
0
-0.2
-0.4
-0.6
-0.8
-1
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Standardized Transition Thermal Resistance:γs(t)
1
Rth(ch-a)=62.5℃/W, (Implemented on a ceramic PCB)
0.1
Single Pulse
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width:PW (s)
517
TOREX [ TOREX SEMICONDUCTOR ]
