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2SK3878 参数 Datasheet PDF下载

2SK3878图片预览
型号: 2SK3878
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型开关稳压器的应用 [Silicon N-Channel MOS Type Switching Regulator Applications]
分类和应用: 稳压器开关
文件页数/大小: 6 页 / 210 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 1.0
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
= 7.0 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 720 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
±30
9
27
150
778
9
15
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
SC-65
2−16C1B
Weight: 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.833
50
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: V
DD
=
90 V, T
ch
=
25°C, L
=
17.6 mH, R
G
=
25
Ω,
I
AR
=
9 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2006-11-13