2SK3878
Electrical Characteristics (Ta
=
25°C)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
t
f
I
D
=
4 A
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
I
G
= ±10 μA,
V
DS
=
0 V
V
DS
=
720 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
4 A
V
DS
=
15 V, I
D
=
4 A
Min
⎯
±30
⎯
900
2.0
⎯
3.5
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.0
7.0
2200
45
190
25
Max
±10
⎯
100
⎯
4.0
1.3
⎯
⎯
⎯
pF
Unit
μA
V
μA
V
V
Ω
S
⎯
10 V
0V
4.7
Ω
⎯
⎯
⎯
ns
⎯
V
OUT
V
GS
Turn-on time
Switching time
Fall time
⎯
R
L
=
100
Ω
65
⎯
V
DD
∼
400 V
−
⎯
20
⎯
⎯
⎯
⎯
⎯
nC
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
t
off
Duty
<
1%, t
w
=
10
μs
=
120
Q
g
Q
gs
Q
gd
V
DD
∼
400 V, V
GS
=
10 V, I
D
=
9 A
−
⎯
⎯
⎯
60
34
26
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
9 A, V
GS
=
0 V
I
DR
=
9 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1.4
16
Max
9
27
−1.7
⎯
⎯
Unit
A
A
V
μs
μC
Marking
TOSHIBA
K3878
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-13
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
