TLP560G
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
53°C)
LED
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Junction temperature
Off−state output terminal voltage
On−state RMS current
Detector
Ta = 25°C
Ta = 70°C
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
DRM
I
T(RMS)
ΔI
T
/ °C
I
TP
I
TSM
T
j
T
stg
T
opr
T
sol
BV
S
Rating
50
−0.7
1
5
125
400
100
50
−1.1
2
1.2
115
−55~125
−40~100
260
2500
Unit
mA
mA / °C
A
V
°C
V
mA
mA / °C
A
A
°C
°C
°C
°C
V
rms
On−state current derating (Ta
≥
25°C)
Peak on−state current (100μs pulse, 120pps)
Peak nonrepetitive surge current
(Pw = 10ms, DC = 10%)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Isolation voltage (AC, 1min., R.H.
≤
60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Peak on−state current
Operating temperature
Symbol
V
AC
I
F
I
TP
T
opr
Min.
―
15
―
−25
Typ.
―
20
―
―
Max.
120
25
1
85
Unit
V
ac
mA
A
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
