TLP560G
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Detector
Holding current
Critical rate of rise of
off−state voltage
Critical rate of rise of
commutating voltage
Symbol
V
F
I
R
C
T
I
DRM
V
TM
I
H
dv / dt
dv / dt(c)
I
F
= 10mA
V
R
= 5V
V = 0, f = 1MHz
V
DRM
= 400V
I
TM
= 100 mA
―
V
in
= 120V
rms
, Ta = 85°C
V
in
= 30V
rms
, I
T
= 15mA
(Fig.1)
(Fig.1)
Test Condition
Min.
1.0
―
―
―
―
―
200
―
Typ.
1.15
―
10
10
1.7
0.6
500
0.2
Max.
1.3
10
―
100
3.0
―
―
―
Unit
V
μA
pF
nA
V
mA
V /
μs
V /
μs
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Trigger LED current
Capacitance
(input to output)
Isolation resistance
Symbol
I
FT
C
S
R
S
V
T
= 3V
V
S
= 0, f = 1MHz
V
S
= 500V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Test Condition
Min.
―
―
5×10
10
Typ.
5
0.8
10
14
Max.
10
―
―
―
―
―
Unit
mA
pF
Ω
V
rms
V
dc
2500
―
―
―
5000
5000
Fig.1: dv / dt test circuit
R
in
120Ω
–
1
2
3
4
2kΩ
6
+
V
CC
V
in
5V, V
CC
0V
dv / dt(c
)
dv / dt
3
2007-10-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
