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TC1201 参数 Datasheet PDF下载

TC1201图片预览
型号: TC1201
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声和中等功率GaAs场效应管 [Low Noise and Medium Power GaAs FETs]
分类和应用:
文件页数/大小: 6 页 / 251 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
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TC1201  
REV5_20070502  
SCHEMATIC  
TOM2 MODEL PARAMETERS  
Parameters  
VTO  
ALPHA  
BETA  
GAMMA  
DELTA  
Q
Parameters  
-0.757 V  
3.92  
VMAX  
CGD  
CGS  
CDS  
RIS  
0.5  
V
0.032 pF  
1.7929 pF  
0.097 pF  
0.161  
Lg  
Rg  
Cgd  
Ld  
Rd  
Rid  
Id  
0.0509  
0.3815  
0.987  
7.121 Ohm  
0.001 Ohm  
Cgs  
Ris  
Rdb  
Cbs  
RID  
Cds  
NG  
0.1  
VBR  
RDB  
CBS  
9
V
ND  
0.01  
173.9 Ohm  
0.0266 pF  
25 °C  
0.0005 nH  
0.0278 nH  
0.0243 nH  
1
TAU  
5.098 ps  
Rs  
Ls  
RG  
2.205 Ohm TNOM  
0.898 Ohm LS  
1.631 Ohm LG  
1E-11 mA LD  
RD  
RS  
IS  
N
1
1
AFAC  
VBI  
V
V
NFING  
1
VDELTA  
0.2  
CHIP HANDLING  
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be  
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C 5°C; Handling Tool: Tweezers;  
Time: less than 1min.  
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil  
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:  
20 to 30 gms depending on size of wire and Bond Tip Temperature.  
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised  
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all  
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.  
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.  
Web-Site: www.transcominc.com.tw  
Phone: 886-6-5050086  
6 / 6  
Fax: 886-6-5051602