AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
(continued)
55
50
(%), EVM (%)
Z
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
600 kHz
EVM
25
G
PS
400 kHz
-25
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
SPECTRAL REGROWTH (dBc)Z
SPECTRAL REGROWTH (dBc)Z
-30
G
PS
(dB),
P
OUT
(W) Avg.Z
Test Conditions:
V
DD
= 26 Vdc, I
DQ
= 250 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. P
OUT
55
50
(%), EVM (%)
Z
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
600 kHz
EVM
25
G
PS
400 kHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
G
PS
(dB),
P
OUT
(W) Avg.Z
Test Conditions:
V
DD
= 28 Vdc, I
DQ
= 250 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. P
OUT
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
