AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
A
RD
U
CT
S
TOW
0.0
Ð
>
W
A
V
EL
E
N
GTH
170
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.0
Ð
D
L
OA
D
<
OW
A
R
7
±
180
HS
T
0.4
70
N
GT
-1
E
V
EL
WA
<Ð
-90
-160
0.2
0.49
0.1
)
/
Yo
(-jB
CE
AN
PT
CE
US
E
S
1.
0
4
0.0
50
-1
-80
V
TI
UC
0.4
0.3
6
IN
D
-75
R
O
),
Zo
5
5
0.0
-70
06
0.
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
MHz (f)
1930 (f1)
1960 (f2)
1990 (f3)
Note:
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance) (Complex Optimum Load Impedance)
4.49 – j6.43
10.00 – j6.30
4.06 – j5.98
9.65 – j6.25
3.78 – j5.61
9.44 – j6.33
Z
L
was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2)
Z
S
DRAIN (1)
Z
L
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
32
0.
18
0.
0
-5
-25
44
0
-65
.5
0.
0.3
0.1
3
7
-30
-60
1.8
0
2.
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
AC
TA
0.0
0.4
9
1
NC
E
C
OM
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
4
-1
0.
0.4
4
X/
0
5.0
0.2
-15
4.0
-20
3.
0
1.
0
f3
-85
f1
0.8
0.6
-10
Z
S
f3
f1
0.48
0.6
0.
8
10
Z
L
0.4
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
0.6
0.4
Z
0
= 20
Ω
0.48
IN
D
90
0.
0.2
0.3
-4
0
8
10
0.1
-1
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
R
L
E
OF
EES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
20
L
E
OF
ANG
0.2
0.
19
0.
31
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
07
30
0.
43
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
