Product Datasheet
TGA1073C-SCC
RF SPECIFICATIONS
(T
A
= 25°C + 5°C)
NOTE
TEST
MEASUREMENT
CONDITIONS
6V @ 240mA
36 – 39 GHz
40 GHz
37 GHz
38.5 GHz
40 GHz
36 – 40 GHz
36 – 40 GHz
VALUE
MIN
12
9
23
23
21
TYP
15
14
26
26
25
-10
-8
33
MAX
dB
dB
dBm
dBm
dBm
dB
dB
dBm
UNITS
1/
SMALL-SIGNAL
GAIN MAGNITUDE
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
1/
1/
INPUT RETURN LOSS
MAGNITUDE
OUTPUT RETURN LOSS
MAGNITUDE
OUTPUT THIRD ORDER
INTERCEPT
1/
RF probe data is taken at 1 GHz steps.
RELIABILITY DATA
PARAMETER
R
θJC
Thermal resistance
(channel to backside of
c/p)
BIAS CONDITIONS
V
D
(V)
I
D
(mA)
6
240
P
DISS
(W)
1.44
R
θJC
(C/W)
32.43
T
CH
(°C)
116.7
T
M
(HRS)
2.1 E7
Note: Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20mil CuMo Carrier at 70°C
baseplate temperature. Worst case condition with no RF applied, 100% of DC power is
dissipated.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
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