TGA4543
40.5 - 43.5 GHz Power Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min Typ Max Units
Drain to Gate Voltage, Vd - Vg
10V
Operating Temp. Range -40
+25
+85
C
V
Drain Voltage, Vd
+6.5 V
-4 to 0 V
Vd
6.0
Gate Voltage, Vg
Id
900
1500
-0.7
mA
mA
V
Drain Current, Id
2086 mA
Id (Under RF Drive)
Vg
Gate Current, Ig
-8.2 to 113 mA
13.6 W
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,
T=25°C
Channel Temperature, Tch
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
26 dBm
200°C
Mounting Temperature
(30 Seconds)
320°C
Storage Temperature
-40 to 150C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, Vd = 6 V, Id= 900mA, Vg = -0.7 V Typical.
Parameter
Operational Frequency Range
Conditions
Min
40.5
Typ
Max
43.5
Units
GHz
dB
Gain
23
8
Input Return Loss
Output Return Loss
Output Power
dB
10
dB
Saturation
30
dBm
dBm
dBm
dB/°C
dB/°C
Output Power
1dB Gain Compression
18 dBm Output/Tone
28.5
38
Output TOI
Gain Temperature Coefficient
Power Temperature Coefficient
-0.04
-0.023
1dB Gain Compression
Preliminary Data Sheet: Rev – 9/15/12
- 2 of 12 -
Disclaimer: Subject to change without notice
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© 2012 TriQuint Semiconductor, Inc.