TGA4543
40.5 - 43.5 GHz Power Amplifier
Specifications
Thermal and Reliability Information
Rating
Parameter
Thermal Resistance, θJC, measured to back of
Condition
Tbase = 70 °C
package,
Small-Signal
Under RF Drive
θJC = 7.6 °C/W
θJC = 10.4 °C/W
Tch = 111 °C
Tm = 2.2E+7
Hours
Tbase = 70 °C, Vd = 6 V, Id = 900
mA, Pdiss = 5.4 W
Channel Temperature (Tch), and Median Lifetime
(Tm)
Tbase = 70 °C, Vd = 6 V, Id = 1500
mA, Pout = 30.5 dBm, Pdiss = 7.9 W
Tch = 152 °C
Tm = 8.3 E+5
Hours
Channel Temperature (Tch), and Median Lifetime
(Tm) Under RF Drive
Note: Thermal model includes 38um AuSn bondline and 500um CuMo thermal spreader
Median Lifetime (Tm) vs. Channel Temperature (Tch)
1.E+15
1.E+14
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
FET5
25
50
75
100
125
150
175
200
ChannelTemperature,Tch (°C)
Preliminary Data Sheet: Rev – 9/15/12
- 3 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
© 2012 TriQuint Semiconductor, Inc.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
