Advance Product Information
June 30, 2004
TGA4915-EPU-CP
TABLE I
MAXIMUM RATINGS
Symbol
V
+
V
-
I
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Value
8V
-3V TO 0V
8A
124 mA
27 dBm
34 W
150
°C
210
°C
-65 to 150
°C
Notes
2/
2/
2/
2/, 3/
4/, 5/
1/
2/
3/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
P
D
is the power dissipation allowed in order to reach a channel temperature of 150°C with a package
base temperature of 70°C. When operated at this power dissipation with a baseplate temperature of
70°C, the MTTF is 1.0E+6 hours.
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
4/
5/
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
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