Production Process
TQHBT3
InGaP HBT Foundry Service
TQHBT3
Process
Details
TQHBT3 Process Details
Element
Parameter
Value
Units
µm
HBT Transistor
Emitter Periphery
(Standard Cell)
3 x 3 x 30
2um emitters are also available!
Vbe
Beta
1.15
130
40
65
24
7
V
Ft
GHz
GHz
V
Fmax
BVcbo
BVbeo
BVceo
Metal Layers
V
14
3
V
Interconnect
MIM Caps (Top
Stacked Cap)
Value
1200
pF/mm2
pF/mm2
Bottom Stacked Cap
Inductors
Value
Q @ 2 GHz
NiCr
625
>20
50
Resistors
Ohms/sq
Ohms/sq
Bulk
350
Vias
Yes
Mask Layers
No Vias
With Vias
14
16
Maximum
Ratings
HBT Storage Temperature Range
-65 to +150
-55 to +150
Deg C
Deg C
HBT Operating Junction Temperature Range
Junction Current Denstity
MIM Capacitor
20
20
kA/cm^2
V
Semiconductors for Communications
TriQuint Semiconductor
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
Phone: 503-615-9000
Fax: 503-615-8905
Email: info@triquint.com
www.triquint.com
Page 2 of 6; Rev 1.1 2/8/2005
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
