TQP3M9006
High Linearity LNA Gain Block
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,CW,50
Ω,T=25ºC
Device Voltage,Vdd
Recommended Operating Conditions
Parameter
o
Rating
-55 to 150 C
+ 20 dBm
+7 V
Min
3.0
-40
Typ
5
Max Units
5.25
+85
190
V
o
C
o
C
Vdd
Tcase
Tj (for>10
6
hours MTTF
)
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50
Ω
system.
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Supply Voltage, Vdd
Current, Idd
Thermal Resistance (jnc to case)
θ
jc
Conditions
Min
500
Typical
1900
Max
4000
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
12
13.5
13
19
+22.4
15
See Note 1.
+35
+38.5
1.0
+5
68
90
54.5
112
mA
o
C/W
Notes:
1. OIP3 is measured with two tones at an output power of 4 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone.
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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