TQP3M9006
High Linearity LNA Gain Block
Device Characterization Data
S11
30
25
2.
0
S22
6
0.
3.
0
0
4.
Gain (dB)
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
-0
.4
-0
.4
0
.
-2
.
-2
0
-0
.6
-0
.6
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
S(1,1)
Frequency (GHz)
Swp Min
0.01GHz
-1.0
-0.8
-0.8
S-Parameter Data
V
dd
= +5 V, I
cq
= 90 mA, T = +25
°
C, unmatched 50 ohm system, calibrated to device leads
Freq
(MHz)
50
100
200
400
800
1000
1200
1500
1900
2000
2200
2500
2600
3000
3500
4000
S11 (dB)
-16.84
-17.401
-17.287
-16.259
-14.058
-13.461
-13.096
-12.757
-12.718
-12.97
-13.043
-13.062
-13.221
-13.475
-14.256
-14.52
S11 (ang)
-151.32
-164.51
-168.02
-169.15
-173.2
-175.46
-177.29
-177.2
-173.31
-172.34
-169.97
-163.57
-163
-157.55
-162.42
178.56
S21 (dB)
23.531
23.315
22.903
21.851
19.184
17.931
16.795
15.241
13.397
12.969
12.161
11.043
10.671
9.3978
8.1567
7.1124
S21 (ang)
168.18
165.29
156.16
138.35
111.93
102.1
93.532
81.983
68.817
65.789
60.064
52.376
49.934
40.398
28.943
16.613
S12 (dB)
-28.093
-28.064
-27.93
-27.459
-25.857
-24.902
-23.936
-22.616
-21.104
-20.821
-20.183
-19.352
-19.117
-18.141
-17.037
-16.013
S12 (ang)
6.4819
6.2924
10.039
17.79
30.27
33.496
36.097
37.018
36.304
36.102
34.744
32.905
32.135
28.959
24.266
16.846
S22 (dB)
-13.835
-14.006
-14.114
-14.288
-15.59
-16.791
-18.092
-19.269
-18.018
-17.678
-16.05
-14.575
-14.005
-12.674
-12.843
-14.488
-1.0
S22 (ang)
-175.95
164.09
138.62
101.29
50.117
30.427
9.8602
-24.674
-60.918
-67.922
-77.206
-88.454
-90.198
-99.96
-111.14
-134.94
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
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3 of 9
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Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
-3
.0
-3
.0
Gain (dB)
Swp Min
0.01GHz
-4
.0
10
-5.
0
-4
.0
-5.
0
2
-0.
2
-0.
-10.0
-10.0
15
0
10.0
20
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0.2
5.0
0.
4
0.
4
De-embedded S-parameter
Vcc = 5V
0.2
2.
0
De-embedded Gain
6
0.
Swp Max
6GHz
Swp Max
6GHz
1.0
0.8
0.8
1.0
3.
0
0
4.
5.0
10.0
S(2,2)
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
