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2SC4695 参数 Datasheet PDF下载

2SC4695图片预览
型号: 2SC4695
PDF下载: 下载PDF文件 查看货源
内容描述: 采用FBET过程。小通阻抗[罗恩= 1W ( IB = 5毫安)。 [Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].]
分类和应用:
文件页数/大小: 2 页 / 196 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SC4695的Datasheet PDF文件第1页  
SMD Type
SMD Type
IC
Product specification
2SC4695
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 40V, I
E
=0
V
EB
= 20V, I
C
=0
V
CE
= 5V , I
C
= 10mA
V
CE
= 10V , I
C
= 10mA
V
CB
= 10V , f = 1.0MHz
300
250
3.6
0.12
0.85
50
20
25
135
0.5
1.2
Min
Typ
Max
0.1
0.1
1200
MHz
pF
V
V
V
V
V
ns
Unit
ìA
ìA
V
CE(sat)
I
C
= 100mA , I
B
= 2mA
V
BE(sat)
I
C
= 100mV , I
B
= 2mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
t
on
Storage time
t
stg
450
ns
Fall time
t
f
100
ns
Marking
Marking
WT
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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