CHA2266
Electrical Characteristics on wafer
Tamb = +25° Vd = 4V
C,
Symbol
Fop
G
∆G
NF
RLin
RLout
P1dB
P3dB
Id small
signal
Rth
12.5-17GHz Driver Amplifier
Parameter
Operating frequency range
Small signal gain
Small signal gain flatness
Noise Figure
Input return loss
Output return loss
Output power at 1 dB gain compression
Saturated output power
Drain bias current
Thermal resistance @ Tback side=25°
C
Min
12.5
31
Typ
Max
17
Unit
GHz
dB
dB
34
±
0.5
2.5
-10
-10
3.0
-6
-6
dB
dB
dB
dBm
13.5
15
14.5
16
130
80°
C
170
mA
°
C/W
Absolute maximum Ratings
(1)
Symbol
Vd
Pin
Tj max
Top
Tstg
Drain bias voltage
Maximum continuous input power overdrive
Maximum peak input power overdrive(2)
Maximum junction temperature
Operating temperature range
Storage temperature
Parameter
Values
4.3
-15
+15
175
-40 to +85
-55 to +125
Unit
V
dBm
dBm
°
C
°
C
°
C
(1) Operation of this device above any of these parameters may cause permanent damage.
(2) Duration <1s
Ref. : DSCHA22667082- 23 Mar 07
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
