CHA5010b
Electrical Characteristics
Tamb = +25°C, Vd = 8V, Vg = -1.5V
Symbol
Fop
G
∆G
P1db
PAE
VSWRin
Id
X Band Driver Amplifier
(1)
Parameter
Operating frequency range
Small signal gain @ Pin = +5dBm
Small signal gain flatness
Pulsed output power @ Pin = +13dBm
Power added efficiency at saturation
Input VSWR (2)
Bias current
Min
9
14
Typ
Max
10.5
Unit
GHz
dB
dB
dBm
%
15
±
1.5
26
27
15
2.0:1
520
mA
(1) These values are representative of on-wafer pulsed measurements that are made without
bonding wires at the RF ports.
(2) Vd = 3.5V, Vg = -1.5V, [S] parameter measurements.
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Vd
Pdiss
Vg
Pin
Ta
Tstg
Parameter
Positive supply voltage
Maximum power dissipated
Negative supply voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
+10
7.0 @ Ta = +25°C
4.3 @ Ta = +70°C
-3.5 to 0
+20
-25 to +70
-55 to +125
Unit
V
W
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA50100096 - 05-Apr-00
2/4
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
