13-16GHz High Power Amplifier
CHA6042
Predicted Output Power at 1dB Gain Compression
36
35
34
33
32
31
30
29
28
27
26
12
13
14
15
16
17
FREQUENCY (GHz)
Absolute Maximum Ratings
Tamb. = 25 °C (1)
Symbol
Vds
Ids
Parameter
Drain bias voltage_small signal
Values
10.5
Unit
V
mA
V
Drain bias current_small signal
Gate bias voltage
1500
Vgs
Vdg
Pin
-2 to +0.4
+12
Maximum Drain Gate voltage (Vd-Vg)
Maximum peak input power overdrive (2)
Operating Temperature Range (3)
Storage Temperature Range
V
+18
dBm
C
Ta
-45 to +80
-55 to +125
Tstg
C
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Duration < 1 s
3. AuSn solder mount to CuW or CuMo carrier assumed
Ref. : DSCHA6042218 - 06-Aug.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
