CHA6250-QFG
Electrical Characteristics
5.5-9GHz Power Amplifier
Tamb.= +25°C, Vd = +7.0V
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
G_T
Linear Gain variation versus Temperature
RL_in
Input Return Loss
RL_out
Output Return Loss
OP1dB
Output power @1dB comp. [5.5 - 6.8GHz]
Output power @1dB comp. [6.8 - 9GHz]
Psat
Saturated output power
OTOI
Output TOI
PAE
Power Added Efficiency @ 1dB compression
Idq
Quiescent Drain current
Vg
Gate voltage
These values are representative of onboard measurements
paragraph "Evaluation mother board".
Unit
GHz
23.5
dB
-0.03
dB/°C
-18
dB
-14
dB
32.5
33.5
dBm
31.5
32.5
dBm
34.5
dBm
43
dBm
29
%
900
1000
mA
-0.5
V
as defined on the drawing in
Min
5.5
21
Typ
Max
9
27
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
7.5V
V
Idq
Drain bias current
1.06
A
Vg
Gate bias voltage
-2 to +0
V
Pin
Input continuous power
15
dBm
Tj
Junction temperature
(2)
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N
o
VD1
30
VD2
28
VD3
25
VG
13
Parameter
DC Drain voltage 1
st
stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage tuned for Idq= 0.9A
Values
7
7
7
-0.5
Unit
V
V
V
V
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
2/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10,
Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
