CHA6517
Electrical Characteristics
X-band High Power Amplifier
Tamb = 25° (2), Vd=8V, Id (Quiescient) = 0.6A, Pu lsed biasing mode, each channel
C
Symbol
F_op
G_lin
RL_in
RL_out
Psat
PAE_sat
Vd
Id
Vg
Top
Parameter
Operating frequency
Linear gain (Pin=-5dBm)
Input Return Loss
Output Return Loss
Saturated output power (Pin=11dBm)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Min
6
19
Typ
22
-14
-8
32
15
8
0.6
-0.4
Max
18
-8
-4
30
-40
+70
Unit
GHz
dB
dB
dB
dBm
%
V
A
V
°
C
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Absolute Maximum Ratings (1)
Symbol
Pin (2)
Vd (2)
Id (2)
Pd (2)
Tj
Tstg
(1)
(2)
Parameter
Maximum Input power
Positive supply voltage without RF power
Positive supply quiescent current
Power dissipation
Junction temperature
Storage temperature range
Values
19
8.5
1
13.5
175
-55 to +125
Unit
dBm
V
A
W
°
C
°
C
Operation of this device above anyone of these parameters may cause permanent damage.
These values are specified for Tamb = 25°
C
Ref. : DSCHA6517-8205 - 25 Jun 08
2/10
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
