CHE1270
Electrical Characteristics
(1)
Tamb = +25° Vdc = +4.5V
C,
Symbol
F
Dr
IPr
Frequency range
Dynamic range
Input Power range
IPr_min
IPr_max
Vdetect Voltage detection Vref – Vdet
from IPr_min to IPr_max
RL
Return Loss (12 – 14.5GHz)
Return Loss (15 – 40GHz)
Vdc
Idc
Bias voltage
Bias current
Parameter
12-40GHz Detector
Min
12
Typ
Max
40
Unit
GHz
dB
dBm
dBm
mV
dB
dB
V
µA
35
-20
15
10
to
1800
-8
-10
4.5
75
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports but with 27kΩ resistor in parallel on pads Vdet and Vref.
Absolute Maximum Ratings
(1)
Temp = +25°
C
Symbol
Vdc
IPr_max
Top
Tstg
Bias voltage
Maximum Input power
Operating temperature range
Storage temperature range
Parameter
Values
6
18
-40 to +85
-55 to +125
Unit
V
dBm
°
C
°
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHE1270-7297 - 24 Oct 07
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
