CHR2299-99F
Electrical Characteristics
Tamb. = +25°C
Symbol
F_RF
F_LO
F_IF
Gc
Im rej
P_LO
NF
IMD3
RL_RF
RL_LO
P_4FLO
4xFLO_Lk
DX, DA
GM
G3
GX
IdT
Parameter
40-44GHz Down converter
Min
40
9.5
DC
Typ
Max
44
11.5
2.0
Unit
GHz
GHz
GHz
dB
dB
dBm
dB
dBc
dB
dB
dBm
dBm
V
V
V
V
mA
RF frequency range
LO frequency range
IF frequency range
Conversion gain
Image rejection
LO Input power
Noise figure for IF>0.1GHz
Intermodulation level at Pin
2tones
= -30dBm
RF Return Loss
LO Return Loss
Output power at 4LO_OUT port
4xFLO leakage on RF port
LO multiplier, buffer and LNA biasing
Mixer gate biasing
LO buffer gate biasing
Multiplier gate biasing
Total biasing current
21
12
0
4.5
45
6
12
-1
-38
4
-0.6
-0.3
-1.2
240
Electrostatic discharge sensitive device observe handling precautions!
These values are representative of chip on board measurements with a 90° hybrid coupler.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
DX, DA
LO multiplier, buffer and LNA biasing
4.5
IdT
Total biasing current
300
GM, G3, GX Gate bias voltage
-2; +0.6
P_LO
Maximum peak input LO power overdrive
(2)
10
(2)
Pin_RF
Maximum peak input RF power overdrive
-5
Tj
Junction temperature
175
Ta
Operating temperature range
-40 to +85
Tstg
Storage temperature range
-55 to +155
RTh
Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W
80
(1)
(2)
Unit
V
mA
V
dBm
dBm
°C
°C
°C
°C/W
Operation of this device above anyone of these parameters may cause permanent damage
Duration < 1s
2/12
Specifications subject to change without notice
Ref. : DSCHR22992012 - 19 Jan 12
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
