UI(D)4N60
N-Ch 600V Fast Switching MOSFETs
General Description
The UI(D)4N60 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UI(D)4N60 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BV
DSS
600V
Applications
RD
S(ON)
2.25
Ω
ID
3.2A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
TO-251/TO-252 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
dv/dt
P
D
T
J1
T
STG
T
L
Drain-Source Voltage
Drain Current
–Continuous(T
C
= 25
℃
)
–Continuous(T
C
= 100
℃
)
Drain Current
–Pulsed
(Note1)
Parameter
TO-251/TO-252
600
3.2
1.9
12.8
±30
(Note2)
(Note3)
63
4.5
57
0.45
-55 to + 150
300
Unites
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
Gate-Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25℃)
-Derate above 25
℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from
case for 5 seconds
Thermal Data
Symbol
R
θ
JC
R
θ
JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
2.2
50
Units
℃/W
℃/W
1
UNITPOWER [ Unitpower Technology Limited ]
