UI(D)4N60
N-Ch 600V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain-Source Breakdown Voltage
V
I
= 0 V, I = 250μA
600
--
--
--
--
V
GS
D
/
Breakdown Voltage Temperature
Coefficient
= 250μ A, Referenced to 25℃
0.6
V/℃
D
V
= 600 V, V = 0 V
GS
DS
--
--
--
--
--
--
--
--
10
μA
μA
nA
nA
(TC = 25℃)
= 480 V, V = 0 V
IDSS
Zero Gate Voltage Drain Current
V
DS
GS
100
100
-100
(TC = 125℃)
Gate-Body
Forward
Leakage
Leakage
Current,
Current,
IGSSF
IGSSR
V
V
= 30 V, V = 0 V
DS
GS
GS
Gate-Body
Reverse
= -30 V, V = 0 V
DS
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
V
= V , I = 250 μA
2.5
--
3.5
2.25
2.6
4.5
2.81
--
V
Ω
S
DS
GS
DS
GS
D
Static Drain-Source
On-resistance
V
V
= 10 V, I = 1.6A
D
Forward Transconductance
= 10 V, I = 1.6 A
(Note 4)
--
D
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
500
53.2
7.0
650
69
9.1
pF
pF
pF
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
f = 1.0 MHZ
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
11
20
30
27
48
72
46
20
--
ns
ns
ns
V
= 300 V, I = 3.2A,
DD
D
R
= 25 Ω
G
(Note 4, 5)
(Note 4, 5)
19
ns
14.5
3.4
7.0
nC
nC
nC
V
V
= 480 V, I = 3.2A,
DS
GS
D
= 10 V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
1.13
561
0.8
3.2
12.8
1.4
--
A
A
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 3.2A
V
GS
GS
S
ns
μ C
= 0 V,I = 3.2A,
S
dIF/dt = 100 A/μ s
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating：Pulse width limited by maximum junction temperature
2. L = 10mH, I = 3.4A, V = 50V, R =25Ω, Starting T = 25℃
AS
DD
G
J
3. I ≤ 3.2A, di/dt ≤ 200A/μS, V ≤ BV
, Starting T = 25℃
DSS J
SD
DD
4. Pulse Test：Pulse width ≤ 300μS, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
UNITPOWER [ ShenZhen XinDeYi Electronics Co., Ltd. ]
