US3400
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
25
20
10V
3V
16
4.5V
2.5V
12
I
D
(A)
V
DS
=5V
20
15
I
D
(A)
10
V
GS
=2V
8
125°C
25°C
5
4
0
0
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
0
0
0.5
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
3
60
50
R
DS(ON)
(m )
40
30
20
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=2.5V
Normalized On-Resistance
1.8
1.6
V
GS
=4.5V
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=10V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
70
60
I
D
=5A
R
DS(ON)
(m )
50
40
30
20
10
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
I
S
(A)
125°C
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
3
UNITPOWER [ Unitpower Technology Limited ]
