11N50
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
RATINGS
UNIT
500
V
±30
V
T
C
=25°C
11 (Note 2)
A
I
D
Continuous Drain Current
T
C
=100°C
7 (Note 2)
A
Pulsed Drain Current (Note 3)
I
DM
44 (Note 2)
A
Single Pulsed Avalanche Energy(Note 4)
E
AS
670
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220
195
T
C
=25°C
TO-220F1
48
W
TO-220F
147
P
D
Power Dissipation
TO-220
1.56
Derate above
TO-220F1
0.39
W/°C
25°C
TO-220F
1.18
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=10mH, I
AS
=11A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
5. I
SD
≤11A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
SYMBOL
V
DSS
V
GSS
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.64
2.58
0.85
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-462.c
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