11N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
=250μA,Referenced to 25°C
V
DS
=500V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=500V, T
J
=125°C
Gate-Source Leakage Current
I
GSS
V
DS
=0V ,V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=400V, V
GS
=10V, I
D
=11A
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=250V, I
D
=11A, R
G
=3Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=11A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=11A,
dI
F
/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN
500
0.5
TYP MAX UNIT
V
V/°C
10
µA
100
µA
±100 nA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
2.0
4.0
0.48 0.55
1515 2055
185 235
25
30
43
8
19
24
70
120
75
55
57
150
250
160
11
44
1.4
90
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-462.c
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