2N60L
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=2.4A, R
G
=25Ω
(Note 4, 5)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=2.4A
Gate-Source Charge
Q
GS
(Note
4,
5)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/µs (Note4)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating : Pulse width limited by T
J
2. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
2.4A, di/dt
≤200A/µs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Power MOSFET
MIN
TYP MAX UNIT
10
25
20
25
9.0
1.6
4.3
30
60
50
60
11
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
1.4
2.0
8.0
180
0.72
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