2SB1116/A
PARAMETER
SYMBOL
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
a
=25℃,unless otherwise specified )
RATINGS
UNIT
2SB1116
-60
Collector to Base Voltage
V
CBO
V
2SB1116A
-80
2SB1116
-50
Collector to Emitter Voltage
V
CEO
V
2SB1116A
-60
Emitter to Base Voltage
V
EBO
-6
V
DC
I
C
-1
A
Collector Current
Pulse(Note2)
I
CM
-2
A
Total Power Dissipation
P
C
750
mW
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-20 ~ +85
℃
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10ms, Duty cycle≦50%
ELECTRICAL CHARACTERISTICS
(T
a
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Saturation Voltage(Note) V
CE(SAT)
I
C
=-1A, I
B
=-50mA
Base-Emitter Saturation Voltage(Note)
V
BE(SAT)
I
C
=-1A, I
B
=-50mA
Base Emitter On Voltage(Note)
V
BE(ON)
V
CE
=-2V, I
C
=-50mA
Collector Cut-Off Current
I
CBO
V
CB
=-60V, I
E
=0
Emitter Cut-Off Current
I
EBO
V
EB
=-6V, I
C
=0
V
CE
=-2V,
2SB1116
h
FE1
I
C
=-100mA
DC Current Gain(Note)
2SB1116A
h
FE2
V
CE
=-2V, I
C
=-1A
Transition Frequency
f
T
V
CE
=-2V, I
C
=-100mA
Output Capacitance
C
OB
V
CB
=-10V, I
E
=0, f=1MHz
V
CC
=-10V, I
C
=-100mA
Turn On Time
t
ON
I
B1
=-I
B2
=-10mA, V
BE(OFF)
=2 ~ 3V
Storage Time
t
STG
Fall Time
t
F
Note: Pulse Test: Pulse width≦350μs, Duty cycle
≦
2%
MIN
TYP
-0.2
-0.9
-650
MAX
-1.2
-700
-100
-100
600
400
UNIT
V
V
mV
nA
nA
-600
135
135
81
70
120
25
0.07
0.7
0.07
MHz
pF
μs
μs
μs
CLASSIFICATION OF h
FE1
RANK
h
FE1
Y
135 ~ 270
G
200 ~ 400
L
300
�½�
600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-066.C
UTC-IC [ UNISONIC TECHNOLOGIES ]
