2SB1116/A
TYPICAL CHARACTERISTICS
Static Characteristic
I
B
=-250μA
I
B
=-200μA
Collector Current, Ic (A)
I
B
=-150μA
I
B
=-100μA
I
B
=-50μA
PNP SILICON TRANSISTOR
-100
Collector Current, Ic (mA)
-80
-60
-40
-20
0
-1.0
-0.8
-0.6
-0.4
-0.2
Static Characteristic
I
B
=-5.0mA I
B
=-4.5mA I
B
=-4.0mA
I
B
=-3.5mA
I
B
=-3.0mA
I
B
=-2.5mA
I
B
=-2.0mA
IB=-1.5mA
I
B
=-1.0mA
I
B
=-0.5mA
0
-4
-8
-10
-2
-6
Collector-Emitter Voltage, V
CE
(V)
0.0
0.0
-0.2 -0.4
-0.6 -0.8
-1.0
Collector-Emitter Voltage, V
CE
(V)
V
CE
=-2V
Saturation Voltage, V
BE(SAT)
, V
CE(SAT)
(V)
1000
DC Current Gain, h
FE
DC Current Gain
-10
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
I
C
=20I
B
100
-1
V
BE(SAT)
10
-0.1
V
CE(SAT)
-0.1
-1
Collector Current, I
C
(A)
-10
1
-0.01
-0.1
-1
Collector Current, Ic (mA)
-10
-0.01
-0.01
Time, t
ON
, t
STG
, t
F
(μs)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance, C
ob
(pF)
3 of 4
QW-R201-066.C
UTC-IC [ UNISONIC TECHNOLOGIES ]
