6N80 参数 Datasheet PDF下载

6N80

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(T

C

=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V

DSS

800

V

Gate-Source Voltage

V

GSS

±30

V

Continuous

I

D

6

A

Drain Current (Note 1)

Pulsed

I

DM

22

A

Single Pulsed (Note 2)

E

AS

680

mJ

Avalanche Energy

15.8

mJ

Repetitive (Note 1)

E

AR

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220

138

W

Power Dissipation

P

D

TO-220F/TO-220F1

51

W

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-55~+150

°C

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 37mH, I

AS

= 6A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25°C

3. I

SD

≤

5.5A, di/dt

≤

200A/µs, V

DD

≤

BV

DSS

, Starting T

J

= 25°C

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

Junction to Ambient

Junction to Case

TO-220

TO-220F/TO-220F1

SYMBOL

θ

JA

θ

JC

RATINGS

62.5

0.9

2.45

UNIT

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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