6N80
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
800
0.97
10
100
100
-100
3.0
1.6
5.4
5.0
2.0
V
V/°C
µA
nA
nA
V
Ω
S
BV
DSS
I
D
=250µA, V
GS
=0V
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
V
DS
=800V, V
GS
=0V
I
DSS
V
DS
=640V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
I
GSS
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V,
Output Capacitance
C
OSS
f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=640V, I
D
=6A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=400V, I
D
=6A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=6A, V
GS
=0V
Reverse Recovery Time
t
rr
I
S
=6A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 1)
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
1010 1310 pF
90 115 pF
8
11
pF
21
6
9
26
65
47
44
30
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
60
140
105
90
6
22
1.4
615
5.4
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-500.b
UTC-IC [ UNISONIC TECHNOLOGIES ]
