MJE13009
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current
Base Current
Emitter Current
Total Power Dissipation @ Ta = 25℃
Derate above 25℃
Total Power Dissipation @ T
C
= 25℃
Derate above 25℃
Continuous
Peak*
Continuous
Peak*
Continuous
Peak*
SYMBOL
V
CEO
V
CBO
I
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
NPN SILICON TRANSISTOR
RATINGS
400
700
9
12
24
6
12
18
36
2
16
100
800
UNIT
V
V
V
A
A
A
W
mW/℃
W
mW/℃
℃
℃
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-40 ~ +150
Note: 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
≤
10%
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
PARAMETER
*OFF CHARACTERISTICS
Collector- Emitter Sustaining Voltage
Collector Cutoff Current
V
CBO
=Rated Value
Emitter Cutoff Current
*ON CHARACTERISTICS
DC Current Gain
SYMBOL
V
CEO
I
CBO
I
EBO
h
FE1
h
FE 2
SYMBOL
θ
JA
θ
JC
TEST CONDITIONS
I
C
= 10mA, I
B
= 0
V
BE(OFF)
= 1.5Vdc
V
BE(OFF)
= 1.5Vdc, T
C
= 100℃
V
EB
= 9Vdc, I
C
= 0
I
C
= 5A,V
CE
= 5V
I
C
= 8A,V
CE
= 5V
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 8A, I
B
= 1.6A, T
C
= 100℃
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 8A, I
B
= 1.6A, T
C
= 100℃
4
180
0.06
0.45
1.3
0.2
0.92
0.12
0.1
1
3
0.7
2.3
0.7
RATINGS
54
4
MIN
400
1
5
1
40
30
1
1.5
3
2
1.2
1.6
1.5
V
V
V
V
V
V
V
MHz
pF
µs
µs
µs
µs
µs
µs
TYP
UNIT
℃/W
℃/W
MAX UNIT
V
mA
mA
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃, unless otherwise specified.)
Current-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
DYNAMIC CHARACTERISTICS
Transition frequency
f
T
I
C
= 500mA, V
CE
= 10V, f = 1MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
SWITCHING CHARACTERISTICS
(Resistive Load, Table 1)
Delay Time
t
DLY
V
CC
= 125Vdc, I
C
= 8A
Rise Time
t
R
I
B1
= I
B2
= 1.6A, t
P
= 25µs
Storage Time
t
S
Duty Cycle
≤1%
Fall Time
t
F
Inductive Load, Clamped (Table 1, Figure 13)
Voltage Storage Time
t
S
I
C
=8A, V
clamp
=300V, I
B1
=1.6A
V
BE(OFF)
= 5V, T
C
= 100℃
Crossover Time
t
C
*Pulse Test: Pulse Wieth = 300µs, Duty Cycle = 2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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