MJE13009
TYPICAL CHARACTERISTICS (Cont.)
Figure 5. DC Current Gain
50
V
CE
= 5V
2
NPN SILICON TRANSISTOR
Figure 6. Collector Saturation Region
Collector–Emitter Voltage, V
CE
(V)
I
C
= 12A
1.6
I
C
= 1A
1.2
I
C
= 3A
I
C
= 5A I
C
= 8A
30
DC Current Gain, h
F E
T
J
= 150℃
T
J
= 25℃
20
0.8
10
7
5
0.2 0.3
0.4
T
J
= 25℃
0.5 0.7 1
2
3
5
7
10
20
0
0.050.07 0.1
0.2 0.3
0.5 0.7 1
2
3
5
Collector Current, I
C
(A)
Base Current, I
B
(A)
Figure 7. Base–Emitter Saturation Voltage
1.4
I
C
/I
B
= 3
1.2
0.7
0.6
Figure 8. Collector–Emitter Saturation Voltage
I
C
/I
B
= 3
T
J
= 150℃
0.5
Voltage, V (V)
1
Voltage, V (V)
0.4
0.3
0.2
0.1
T
J
= 25℃
0.8
T
J
= 25℃
T
J
= 150℃
0.6
0.4
0.2 0.3
0.5 0.7 1
2 3
5
Collector Current, I
C
(A)
7 10
20
0
0.2 0.3
0.5 0.7 1
2 3
5
Collector Currnet, I
C
(A)
7 10
20
Figure 9. Collector Cutoff Region
10k
V
CE
= 250V
Collector Current, I
C
(mA)
Figure 10. Capacitance
4k
2k
Capacitance, C (pF)
T
J
= 25℃
C
ib
1k
T
J
= 150℃
100
125℃
100℃
10
1
25℃
0.1
-0.4
REVERSE
FORWARD
+0.6
-0.2
0
+0.2
+0.4
Base–Emitter Voltage, V
BE
(V)
75℃
50℃
1k
800
600
400
200
C
ob
100
80
60
40
0.1 0.2 0.5 1 2 5 10 20 50 100
Reverse Voltage, V
R
(V)
200
500
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