MMBTA06
ABSOLUTE MAXIMUM RATINGS
(T
A
=25℃)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation(Note 1)
P
D
Derate Above 25℃
Junction Temperature
T
J
Storage Temperature
T
STG
Note 1. Device mounted on FR-4=1.6×1.6×0.06 in
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS
80
80
4
500
350
2.8
+150
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/℃
℃
℃
THERMAL DATA
PARAMETER
Thermal Resistance, Junction to Ambient
SYMBOL
θ
JA
MAX
357
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SYMBOL
BV
CEO
BV
EBO
I
CES
I
CBO
h
FE
TEST CONDITIONS
I
C
=1.0mA, I
B
=0
I
E
=100µA, Ic=0
V
CE
=60V, I
B
=0
V
CB
=80V, I
E
=0
I
C
=10mA, V
CE
=1V
I
C
=100mA, V
CE
=1V
I
C
=100mA, I
B
=10mA
I
C
=100mA, V
CE
=1V
MIN
80
4
0.1
0.1
100
100
0.25
1.2
100
V
V
MHz
TYP
MAX
UNIT
V
V
µA
µA
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter on Voltage
V
BE(ON)
SMALL-SIGNAL CHARACTERISTICS
I
C
=10mA, V
CE
=2V,
Current Gain Bandwidth Product
f
T
(Note2)
f=100MHz
Note 1: Pulse test: PW≤300µs, Duty Cycle≤2%
2: f
T
is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R206-041,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
